Title :
A SiC Static Induction Transistor (SIT) technology for pulsed RF power amplifiers
Author :
Chai, Francis K. ; Odekirk, Bruce ; Maxwell, Ed ; Caballero, Mar ; Fields, Terri ; Mallinger, Mike ; Sdrulla, Dumitru
Author_Institution :
Microsemi Corp., Bend, OR, USA
Abstract :
A Static Induction Transistor (SIT) technology capable of delivering output power over 2200W at VDD of 125V in UHF band of 406MHz-450MHz is presented. The transistor technology is built on 3” 4H-SiC epitaxial wafers. L-band performance is presented based on the prototype transistor unit cells. An improved transistor architecture is proposed to further boost frequency and power performance.
Keywords :
power amplifiers; radiofrequency amplifiers; silicon compounds; static induction transistors; 4H-SiC epitaxial wafers; L-band performance; SIT technology; SiC; pulsed RF power amplifiers; static induction transistor; transistor architecture; Implants; Logic gates; Power amplifiers; Power generation; Radio frequency; Silicon carbide; Transistors;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890850
