Title :
UltiMOS: A local charge-balanced trench-based 600V super-junction device
Author :
Moens, P. ; Bogman, F. ; Ziad, H. ; De Vleeschouwer, H. ; Baele, J. ; Tack, M. ; Loechelt, G. ; Grivna, G. ; Parsey, J. ; Wu, Y. ; Quddus, T. ; Zdebel, P.
Author_Institution :
Corp. R&D, ON Semicond., Oudenaarde, Belgium
Abstract :
This paper for the first time reports on a novel “local” charge balanced trench-based super junction transistor. The local charge balance is achieved by selectively growing thin highly-doped n-type and p-type layers in a deep trench structure. The final charge-balanced trench structure is finished with an oxide-sealed airgap. Devices rated at 10A with Vbd=730V and a Ron=23 mΩ.cm2 are demonstrated.
Keywords :
MOS integrated circuits; transistors; UltiMOS; current 10 A; local charge balanced trench-based super junction transistor; oxide-sealed airgap; thin highly-doped n-type layer; thin highly-doped p-type layers; voltage 600 V; voltage 730 V; Implants; Junctions; Logic gates; MOSFET circuits; Performance evaluation; Plugs; Transistors;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890851
