DocumentCode :
169352
Title :
Uniformity improvement for 200 mm APCVD epitaxial Si film by retrofit of Applied Materials Epi Centura
Author :
Kunle, Matthias ; Baumgartl, Johannes ; Ackermann, Thomas
Author_Institution :
Unit Process Dev., Infineon Technol. Austria AG, Villach, Austria
fYear :
2014
fDate :
19-21 May 2014
Firstpage :
389
Lastpage :
392
Abstract :
An upgrade kit for the 200 mm Applied Materials Epi Centura was released. The retrofit includes an alignment tool for the setup of the process kit, a motorized lift as well as a new susceptor design. The hardware parts were installed in an APCVD (Atmospheric Pressure Chemical Vapor Deposition) production tool and tested in a production environment. The upgrade kit enables a reduction of the total range (max-min value) of the epi film thickness profile and a stable repeatability of the deposition process. A qualitative assessment of the new hardware during the production of an electrical device was carried out by analyzing sigma values of a PCM (Process Control Monitoring) parameter which is highly sensitive to variations in the epi thickness. The sigma of the PCM parameter from several lots, processed prior to the retrofit of the chamber and processed in the same chamber in the retrofitted state were compared and a reduction of the sigma value was observed when using the upgrade kit for the epi deposition.
Keywords :
chemical vapour deposition; elemental semiconductors; maintenance engineering; minimax techniques; process control; semiconductor thin films; silicon; APCVD epitaxial Si film; PCM; Si; alignment tool; applied materials epi centura; atmospheric pressure chemical vapor deposition; electrical device; epi film thickness profile; max-min value; motorized lift; process control monitoring; process kit; production environment; production tool; qualitative assessment; retrofit; sigma values; size 200 mm; susceptor design; uniformity improvement; upgrade kit; Epitaxial growth; Hardware; Phase change materials; Production; Silicon; FTIR; chemical vapor deposition; silicon epitaxy; uniformity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location :
Saratoga Springs, NY
Type :
conf
DOI :
10.1109/ASMC.2014.6846961
Filename :
6846961
Link To Document :
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