Title :
Avalanche phenomena in deeply depleted MOS capacitors
Author :
Rusu, A. ; Ionescu, A.M. ; Chovet, A.
Author_Institution :
Dept. of Electron., Politehnic Univ. of Bucharest, Romania
Abstract :
This paper investigates special cases of avalanche phenomena in deeply depleted SOI MOS structures. It is shown that, in the Zerbst-type experiment, the overshoot of the drain current can be related to impact ionization. In the pseudo-MOSFET experiment, the breakdown region of I DS vs. VDS characteristics is used for series resistances evaluation and doping type identification
Keywords :
MOS capacitors; avalanche breakdown; impact ionisation; transient analysis; Si; Zerbst-type experiment; avalanche phenomena; breakdown region; deeply depleted MOS capacitors; doping type identification; drain current overshoot; impact ionization; pseudo-MOSFET experiment; series resistances evaluation; Avalanche breakdown; Electric breakdown; Impact ionization; MOS capacitors; MOSFET circuits; Pulse generation; Semiconductor device doping; Silicon; Tunneling; Voltage;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500942