Effect of parasitic bipolar transistor in submicron MOSFETs

This paper is concerned with the degradation of submicron MOS transistors due to hot-electrons, particularly of avalanche breakdown. It is known that there exists a direct relationship between the multiplication factor M and I_sub. In order to determine the maximum allowable V_D, two definitions are most often used for the determination of I_sub. However, these definitions are not compatible and lead to difficulties when we compare the results of avalanche breakdown. Therefore the analysis in this paper is concerned with the discrepancy between the definitions and shows how to identify the interpretation. It appears that taking into account the influence of the electron mean free path λ, the ionisation constants A₁ and B₁ and the maximum field near the drain edge, E _m vs. the drain voltage V_D can give compatible results to I_sub vs. V_D independent of definition