DocumentCode
1697013
Title
Fabrication of high-quality PZT-based piezoelectric microphone
Author
Hong-Jin Zhao ; Tian-Ling Ren ; Jian-She Liu ; Li-Tian Liu ; Zhi-Jian Li
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
1
fYear
2003
Firstpage
234
Abstract
This paper proposes a novel lead-zirconate-titanate (PZT)-based structure used for the integrated microphone. The performance of the PZT thin films and the devices were improved due to adoption of the lead-titanate (PT) layer as the seeding layer. The PZT-based piezoelectric microphones with conductor-piezoelectric-conductor sandwich structure were fabricated. The size of the finished microphone ranged from 600/spl times/600 /spl mu/ m/sup 2/ to 1000/spl times/1000 /spl mu/ m/sup 2/. A high sensitivity of 38 mV/Pa can be obtained. This quality was prominent in the existed microphones. The frequency response of the microphone was very flat in the audio frequency range. The novel piezoelectric microphones should be very promising for acoustic applications.
Keywords
frequency response; lead compounds; microphones; piezoelectric devices; piezoelectric materials; piezoelectric thin films; PZT; PZT thin films; PbZrO3TiO3; acoustic applications; audio frequency range; conductor-piezoelectric-conductor sandwich structure; frequency response; high-quality PZT-based piezoelectric microphone; integrated microphone; lead-zirconate-titanate-based structure; seeding layer; Crystalline materials; Fabrication; Ferroelectric materials; Microphones; Piezoelectric films; Piezoelectric materials; Sandwich structures; Silicon; Thin film devices; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7731-1
Type
conf
DOI
10.1109/SENSOR.2003.1215296
Filename
1215296
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