• DocumentCode
    1700271
  • Title

    A new output buffer for 3.3-V PCI-X application in a 0.13-μm 1/2.5-V CMOS process

  • Author

    Chen, Shih-Lun ; Ker, Ming-Dou

  • Author_Institution
    Nanoelectronics & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • fYear
    2004
  • Firstpage
    112
  • Lastpage
    115
  • Abstract
    An output buffer with low-voltage devices to driver high-voltage signals for PCI-X applications is proposed in this paper. Because PCI-X is a 3.3-V interface, the high-voltage gate-oxide stress is a serious problem to design PCI-X I/O circuits in a 0.13-μm 1/2.5-V CMOS process. The simulation results show that the proposed output buffer can be operated at 133 MHz without causing high-voltage gate-oxide stress problem in the 3.3-V PCI-X interface. Besides, a level converter with only I-V and 2.5-V devices that can converter 0/1-V voltage swing to 1/3.3-V voltage swing is also proposed in this paper. The testchip to verify this new proposed output buffer is now under fabrication. The measured results will be shown in the presentation.
  • Keywords
    CMOS integrated circuits; buffer circuits; low-power electronics; peripheral interfaces; 3.3 V; CMOS process; PCI-X applications; buffer simulation; driver high-voltage signals; high-voltage gate-oxide stress; level converter; low-voltage devices; output buffer; CMOS process; Circuit simulation; Driver circuits; Laboratories; MOSFETs; Nanoscale devices; Signal processing; Stress; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced System Integrated Circuits 2004. Proceedings of 2004 IEEE Asia-Pacific Conference on
  • Print_ISBN
    0-7803-8637-X
  • Type

    conf

  • DOI
    10.1109/APASIC.2004.1349422
  • Filename
    1349422