Characterization of non irradiated and heavily irradiated CVD diamond dosimeters

Author

Bruzzi, M. ; Bucciolini, M. ; Menichelli, D. ; Pini, S. ; Molnar, J. ; Fenyvesi, A.

Author_Institution

INFM, Florence, Italy

Volume

1

fYear

2001

Firstpage

161

Abstract

A Chemical Vapor Deposited (CVD) diamond film has been characterized as on-line dosimeter under irradiation with a ⁶⁰Co gamma source in the dose range 0.1-1.0 Gy. The current response is strongly influenced by trapping-detrapping effects due to the presence of defects in the polycrystalline bulk. To obtain a stable and reproducible signal the defect distribution has been opportunely changed by irradiating the sample with fast neutrons (1 MeV) up to a fluence of 5×10¹⁴ n/cm². The neutron irradiated sample show a linear response of the released charge as a function of the dose and of the current as a function of the dose-rate, with a sensitivity comparable with that of standard silicon dosimeters.

Keywords

CVD coatings; crystal defects; diamond; dosimeters; gamma-ray detection; semiconductor counters; 0.1 to 1.0 Gy; C; defect distribution; heavily irradiated CVD diamond dosimeters; nonirradiated CVD diamond dosimeters; on-line dosimeter; trapping-detrapping effects; Chemical vapor deposition; Costs; Dosimetry; Energy states; Helium; In vivo; Neutrons; Silicon; Size measurement; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2001 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-7324-3

Type

conf

DOI

10.1109/NSSMIC.2001.1008432

Filename

1008432