Title :
Calculation Of Series Resistance Of MISFETS Using Schwartz-Christoffel Transformation
Author :
Lin, H.C. ; Huang, D.H.
Author_Institution :
University of Maryland
Abstract :
The source and drain resistance of MISFETs can be calculated by means of Schwartz Christoffel transformation. This method, in general, can be applied to calculate the series resistance between two perpendicular electrodes such as those in MESFETs, MISFETs and thin film capacitors. The calculation shows that the series resistance due to current crowding can be many times larger than that calculated from multiplying the sheet resistance by the number of squares of diffusion.
Keywords :
Educational institutions; Electric resistance; Electrodes; Equations; MESFETs; MISFETs; Proximity effect; Semiconductor process modeling; Thin film circuits; Transforms;
Conference_Titel :
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location :
Dublin, Ireland
Print_ISBN :
0-906783-72-0
DOI :
10.1109/NASCOD.1987.721192
