Carbon nano-tube field effect transistors for dualband low noise amplifier

Low noise amplifier (LNA) for 40 GHz and 60GHz wireless PAN has been simulated using a carbon nanotube FET HSPICE model. The LNA transfer gain (S21) and noise figure (NF) were found to be 11 dB and 1.6 dB respectively at 40 GHz and 8 dB and 2 dB at 60 GHz. Excellent simultaneous matching at both bands at input (S₁₁≤-20dB) and output (S₂₂≤-18dB), as well as stability factor K >1 have been achieved. The 3-dB bandwidth (BW) and noise figure (NF) of the proposed LNA circuit at lower and upper bands were >2.5 GHz and <;2dB, respectively and power consumption PDC was 1.75 mW. With gate overdrive V_GS-V_TH<;100mV, transit frequency fr and maximum frequency of oscillation fMAX were reported as ~300 GHz and ~350GHz respectively. Input referred third-order intercept point (IIP3) was reported as ~5.8dBm @40GHz and ~7.5 dBm@60 GHz. An overall figure-of-merit (FoM) involving S21, NF, BW, IIP3 and PDC was found to be significantly higher than a previously published experimental result for silicon CMOSLNA.