Title :
Fully-monolithic, 600°C differential amplifiers in 6H-SiC JFET IC technology
Author :
Patil, Amita C. ; Fu, Xiao-An ; Mehregany, Mehran ; Garverick, Steven L.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
Abstract :
A family of fully-integrated differential amplifiers was designed and fabricated in 6H-SiC, n-channel JFET integrated-circuit technology. A single-stage amplifier with resistor loads has gain-bandwidth of ~2.8 MHz, and differential-mode gain that varies by less than 1 dB from 25-600degC. A two-stage amplifier with current-source loads and common-mode feedback in 1st-stage, and resistor loads in 2nd-stage has gain-bandwidth of 1.4 MHz, and differential-mode gain of 69 dB at 576degC, with just 3.6 dB gain-variation from 25-576degC.
Keywords :
JFET integrated circuits; differential amplifiers; hydrogen; silicon compounds; wide band gap semiconductors; H-SiC; JFET IC technology; bandwidth 1.4 MHz; current-source loads; differential-mode gain; frequency 2.8 MHz; fully-integrated differential amplifiers; fully-monolithic differential amplifiers; gain 3.6 dB; gain 69 dB; n-channel JFET integrated-circuit technology; resistor loads; single-stage amplifier; temperature 25 C to 600 C; two-stage amplifier; Differential amplifiers; Feedback; Gain; Resistors;
Conference_Titel :
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-4071-9
Electronic_ISBN :
978-1-4244-4073-3
DOI :
10.1109/CICC.2009.5280889
