Title :
AlGaAs/GaAs Heterojunction Bipolar Transistors For Power Applications
Author :
Bayraktaroglu, B. ; Camilleri, N. ; Tserng, H.Q.
Author_Institution :
Texas Instruments Incorporated
Keywords :
Doping; FETs; Fabrication; Frequency; Gallium arsenide; Heterojunction bipolar transistors; MOCVD; Microwave devices; Millimeter wave transistors; Power generation;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
DOI :
10.1109/CORNEL.1987.721236
