DocumentCode :
1703839
Title :
A Study Of GaAs Inversion-Base Bipolar Transistor
Author :
Huang, C.I. ; Cheney, M.E. ; Paulus, M.J. ; Scheihing, J.E. ; Crist, J.O. ; Sopko, M.E. ; Bozada, C.A. ; Stutz, C.E. ; Jones, R.L. ; Evans, K.R.
Author_Institution :
Wright-Aeronautical Laboratories
fYear :
1987
Firstpage :
293
Lastpage :
298
Keywords :
Bipolar transistors; Breakdown voltage; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Leakage current; Performance gain; Shape; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
Type :
conf
DOI :
10.1109/CORNEL.1987.721239
Filename :
721239
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1703839
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