Title :
Multiple quantum well based lasing nanostructures: A review
Author :
Anjum, Syed Gulraze ; Siddiqui, M.J.
Author_Institution :
Dept. of Electron. Eng., A.M.U., Aligarh, India
Abstract :
In this paper we have reviewed recent experimental and Simulated results on multiple quantum well based lasing nanostructures. GaN/AlGaN and indium free AlGaN multiple quantum well based laser diodes are demonstrated. It is found that by controlling the well widths of GaN/AlGaN MQW laser diode, there is a limit to shift the lasing wavelength toward deeper ultraviolet region while indium free AlGaN MQW laser diode can have lasing emission at even shorter ultraviolet wavelength. Optimization of active layer structures for GaN/AlGaN MQW laser diodes are also discussed.
Keywords :
aluminium compounds; gallium compounds; nanophotonics; optimisation; quantum well lasers; semiconductor quantum wells; MQW laser diode; active layer structures; lasing emission; lasing wavelength; multiple quantum well-based lasing nanostructures; optimization; well widths; Aluminum gallium nitride; Diode lasers; Gallium nitride; Quantum well lasers; GaN/AlGaN MQW; Laser; Multiple quantum well;
Conference_Titel :
Multimedia, Signal Processing and Communication Technologies (IMPACT), 2013 International Conference on
Conference_Location :
Aligarh
Print_ISBN :
978-1-4799-1202-5
DOI :
10.1109/MSPCT.2013.6782135
