DocumentCode
1704199
Title
Copper interconnect technology for the 32 nm node and beyond
Author
Gambino, Jeff ; Chen, Fen ; He, John
Author_Institution
IBM Microelectron., Essex Junction, VT, USA
fYear
2009
Firstpage
141
Lastpage
148
Abstract
Copper interconnects have gained wide acceptance in the microelectronics industry due to improved resistivity and reliability compared to Al interconnects. However, there are many challenges with implementation of Cu interconnects at the 32 nm node and beyond, including increased resistivity, integration with porous low-k materials, and reliability. In addition, for RF and mixed signal technology, integration of passive devices is required. In this paper, each of these topics is addressed.
Keywords
copper; electromigration; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; mixed analogue-digital integrated circuits; passive networks; Cu; RF technology; copper interconnect technology; electromigration; microelectronics industry; mixed signal technology; package reliability; passive device integration; porous low-k materials; resistivity; size 32 nm; Conductivity; Copper; Materials reliability; Metals industry; Microelectronics; RF signals; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location
San Jose, CA
Print_ISBN
978-1-4244-4071-9
Electronic_ISBN
978-1-4244-4073-3
Type
conf
DOI
10.1109/CICC.2009.5280904
Filename
5280904
Link To Document