Title :
A physics-based analytical model of a GaN/AlGaN HEMT incorporating spontaneous and piezoelectric polarization
Author :
Sippel, Jonathan C. ; Islam, Syed S. ; Mukheijee, S.S.
Author_Institution :
Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA
Abstract :
A physics-based charge control model of an AlGaN/GaN high electron mobility transistor (HEMT) has been used to predict large- and small-signal characteristics. The 2DEG concentration in the channel is calculated using the Schrodinger equation in conjunction with the triangular quantum well approximation. Spontaneous and piezoelectric polarizations at the heterointerface and finite effective width of the 2DEG have been incorporated in the analysis. The calculated results are compared with experimental data from an Al0.15Ga0.85N/GaN HEMT structure to show the agreement. The model predicted a maximum drain current of 523 mA/mm and transconductance of 138 mS/mm for a device of length 1 μm and width 75 μm. The calculated data is compared against experimental values.
Keywords :
III-V semiconductors; Schrodinger equation; aluminium compounds; gallium compounds; high electron mobility transistors; piezoelectric semiconductors; polarisation; quantum well devices; semiconductor device models; semiconductor process modelling; two-dimensional electron gas; 1 micron; 2DEG concentration; 75 micron; Al0.15Ga0.85N-GaN; GaN-AlGaN; HEMT; Schrodinger equation; charge control model; drain current; electron mobility transistor; heterointerface; large-signal characteristics; physics-based analytical model; piezoelectric polarization; small-signal characteristics; spontaneous polarization; transconductance; triangular quantum well approximation; Aluminum gallium nitride; Analytical models; Equations; Gallium nitride; HEMTs; MODFETs; Optical polarization; Piezoelectric polarization; Predictive models; Temperature;
Conference_Titel :
Electrical and Computer Engineering, 2004. Canadian Conference on
Print_ISBN :
0-7803-8253-6
DOI :
10.1109/CCECE.2004.1349663
