Title :
Scaling-down effects on the electrical performance of top-contact pentacene TFTs
Author :
Lee, Jong Duk ; Jin, Sung Hun ; Jung, Keum Dong ; Park, Byung-Gook
Author_Institution :
Inter-Univ. Semicond. Res. Center & Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
Top-contact pentacene TFTs were successfully scaled down to the level of LC - 1.8 μm by using silicon nitride membrane shadow mask Pentacene TFT with the grain size of a few micrometer showed high off-current even in the depletion mode when LC of pentacene TFT was reduced to the length less than 10 μm High mobility of 0 2 cm2/Vsec and good on-off current ratio more than 107 were obtained by using a two step deposition (TSD) technique even for the pentacene TFT with LC=1.8 μm. The grain size plays a key role in determining the off-current level of top-contact pentacene TFTs with LC less than 10 μm.
Keywords :
grain size; scaling phenomena; silicon compounds; thin film transistors; 1.8 micron; 10 micron; depletion mode; electrical performance; grain size; high off-current level; scaling-down effect; shadow mask Pentacene TFT; silicon nitride membrane; top-contact pentacene TFT; two step deposition; Biomembranes; Electrodes; Grain size; Lithography; Organic semiconductors; Pentacene; Radiofrequency identification; Silicon; Temperature; Thin film transistors;
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
DOI :
10.1109/SMELEC.2004.1620973
