DocumentCode :
1707358
Title :
Custom column readout circuitry to extend the dynamic range of a-Si:H current mediated pixel amplifiers for large area diagnostic X-ray imaging applications
Author :
Ottaviani, Tony ; Karim, Karim S.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
Volume :
3
fYear :
2004
Firstpage :
1711
Abstract :
In real-time X-ray fluoroscopy, the patient is continuously exposed to radiation, hence requiring a reduced X-ray dose which results in small input signals to the digital imaging pixel electronics. Conventional switch based amorphous silicon imagers result in poor signal-to-noise ratios (SNR) at low fluoroscopic exposure levels due to noise added by pixel readout electronics. In contrast, amorphous silicon amplified pixels have been reported to give a good SNR for fluoroscopy but their output becomes non-linear for higher doses, limiting their use to low exposure X-ray imaging applications. In this research, we present modifications to column readout amplifier electronics that can extend the dynamic range of an amplified pixel. The larger dynamic range is of particular relevance for amplified pixels used in dual-mode imagers that can switch instantaneously between fluoroscopy and higher contrast chest radiography imaging modes.
Keywords :
amorphous semiconductors; amplifiers; biomedical electronics; biomedical equipment; diagnostic radiography; doping profiles; elemental semiconductors; hydrogen; image sensors; patient diagnosis; readout electronics; semiconductor device noise; silicon; SNR; Si:H; a-Si:H current mediated pixel amplifiers; amorphous silicon amplified pixels; amplified pixel dynamic range; chest radiography imaging mode; column readout amplifier electronics modifications; custom column readout circuitry; digital imaging pixel electronics input signals; dual-mode imagers; large area diagnostic X-ray imaging applications; low exposure X-ray imaging applications; low fluoroscopic exposure levels; nonlinear output; patient radiation exposure; pixel readout electronics noise; real-time X-ray fluoroscopy; reduced X-ray dose; signal-to-noise ratio; switch based amorphous silicon imagers; Amorphous silicon; Circuits; Digital images; Dynamic range; Noise level; Pixel; Readout electronics; Signal to noise ratio; Switches; X-ray imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 2004. Canadian Conference on
ISSN :
0840-7789
Print_ISBN :
0-7803-8253-6
Type :
conf
DOI :
10.1109/CCECE.2004.1349743
Filename :
1349743
Link To Document :
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