Title :
Cryogenic performance of HEMT amplifiers at 340GHz and 670GHz
Author :
Reck, Theodore J. ; Deal, William ; Chattopadhyay, Goutam
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
The cryogenic performance of HEMT amplifiers operating above 300 GHz is presented for the first time. InP HEMT amplifiers designed for room temperature operation are cooled to 25 K and their sensitivity is characterized using the Y-factor method. Minimum noise temperatures of 400 K and 550 K are achieved at 340 GHz and 670 GHz, respectively.
Keywords :
III-V semiconductors; cryogenic electronics; high electron mobility transistors; indium compounds; submillimetre wave amplifiers; HEMT amplifiers; InP; Y-factor method; cryogenic performance; frequency 340 GHz; frequency 670 GHz; room temperature operation; temperature 25 K; Cryogenics; HEMTs; Mixers; Cryogenics; HEMT; Low noise amplifier; Terahertz;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848250
