A radio-frequency reconfigurable CMOS-GaN class-E Chireix power amplifier

Author

van der Heijden, Mark P. ; Acar, Mustafa

Author_Institution

NXP Semicond., Eindhoven, Netherlands

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

A new load-insensitive class-E power amplifier mode is presented that that enables frequency reconfigurability by statically changing the switch duty-cycle without compromising its tuned efficiency performance. The technique is tested on a prototype CMOS-GaN class-E Chireix power amplifier designed for 1.8-2.2 GHz. The drain efficiency is more than 55% at 8dB back-off and more than 60% at 6dB back-off across the band by reconfiguring the duty-cycle at each frequency via the pulse-width controlled CMOS drivers.

Keywords

CMOS integrated circuits; III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; field effect MMIC; gallium compounds; wide band gap semiconductors; class-E Chireix power amplifier; frequency 1.8 GHz to 2.2 GHz; load insensitive power amplifier; pulse width controlled CMOS driver; radio frequency power amplifier; reconfigurable CMOS power amplifier; CMOS integrated circuits; HEMTs; Performance evaluation; Pulse width modulation; Switching circuits; CMOS; Chireix combiner; GaN HEMT; base station; class E; efficiency; outphasing; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848251

Filename

6848251