Title :
Simulation of single quantum-well semiconductor optical amplifiers
Author :
Gallep, Cristiano M. ; Conforti, Evandro
fDate :
6/23/1905 12:00:00 AM
Abstract :
A simple model for the simulation of quantum well semiconductor optical amplifier is presented. Carrier population transients in the separate confinement heterostructure and in the unconfined (above) and confined (inside) states of the quantum well are considered. Preliminary results for the particular single-well case and short cavity length (100 μm) are presented.
Keywords :
carrier density; laser theory; quantum well lasers; semiconductor device models; semiconductor optical amplifiers; semiconductor quantum wells; simulation; QW-SOA characteristics; SCH region; carrier population transients; confined states; model; semiconductor optical amplifiers; separate confinement heterostructure; short cavity length; single quantum-well SOA; unconfined states; Bandwidth; Equations; Fiber nonlinear optics; High speed optical techniques; Nonlinear optics; Optical saturation; Optical switches; Quantum wells; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Microwave and Optoelectronics Conference, 2001. IMOC 2001.Proceedings of the 2001 SBMO/IEEE MTT-S International
Print_ISBN :
0-7803-7065-1
DOI :
10.1109/SBMOMO.2001.1008775
