• DocumentCode
    1711545
  • Title

    Doped GaSe crystals for optical frequency conversion in infrared and terahertz spectral ranges

  • Author

    Atuchin, V.V. ; Andreev, Yu.M. ; Luo, Chih Wei ; Gavrilova, T.A. ; Ku, S.A. ; Sarkisov, S.Yu.

  • Author_Institution
    Lab. of Opt. Mater. & Struct., SB RAS, Novosibirsk, Russia
  • fYear
    2010
  • Firstpage
    539
  • Lastpage
    541
  • Abstract
    GaSe1-xTx (T = S, Te) single crystals have been grown by Bridgman-Stockbarger technique. Structural quality has been evaluated with SEM and TEM observation. Terahertz time-domain spectroscopy has been applied for measurements of the frequency-dependent optical constant of doped GaSe crystals as a function of S-content.
  • Keywords
    III-VI semiconductors; crystal growth from melt; crystal structure; gallium compounds; infrared spectra; optical constants; optical frequency conversion; scanning electron microscopy; terahertz spectroscopy; terahertz wave spectra; transmission electron microscopy; Bridgman-Stockbarger technique; GaSe; S-content; SEM; TEM; infrared spectral range; optical constant; optical frequency conversion; scanning electron microscopy; structural quality; terahertz spectral range; terahertz time-domain spectroscopy; transmission electron microscopy; Crystals; Frequency conversion; Gases; Nonlinear optics; Optical harmonic generation; Optical refraction; Optical variables control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010 IEEE Region 8 International Conference on
  • Conference_Location
    Listvyanka
  • Print_ISBN
    978-1-4244-7625-1
  • Type

    conf

  • DOI
    10.1109/SIBIRCON.2010.5555376
  • Filename
    5555376
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1711545