DocumentCode
1714722
Title
Committee
fYear
2009
Abstract
The following topics are dealt with: indium phosphide; HBT devices; HBT circuits; photonic crystals; long wavelength lasers; epitaxy; hetero-integration; quantum dots; nanostructured lasers; substrate technology; HEMT devices; photodetectors; photonic integration technology; HEMT circuits; quantum cascade devices; semiconductor nanowires; semiconductor heterostructures; and high speed laser sources.
Keywords
III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated optics; nanowires; photonic crystals; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor lasers; semiconductor quantum dots; semiconductor quantum wires; HBT circuits; HBT devices; HEMT circuits; HEMT devices; epitaxy; hetero-integration; high speed laser sources; indium phosphide; long wavelength lasers; nanostructured lasers; photodetectors; photonic crystals; photonic integration technology; quantum cascade devices; quantum dots; semiconductor heterostructures; semiconductor nanowires; substrate technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location
Newport Beach, CA
ISSN
1092-8669
Print_ISBN
978-1-4244-3432-9
Type
conf
DOI
10.1109/ICIPRM.2009.5012405
Filename
5012405
Link To Document