DocumentCode :
1714722
Title :
Committee
fYear :
2009
Abstract :
The following topics are dealt with: indium phosphide; HBT devices; HBT circuits; photonic crystals; long wavelength lasers; epitaxy; hetero-integration; quantum dots; nanostructured lasers; substrate technology; HEMT devices; photodetectors; photonic integration technology; HEMT circuits; quantum cascade devices; semiconductor nanowires; semiconductor heterostructures; and high speed laser sources.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated optics; nanowires; photonic crystals; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor lasers; semiconductor quantum dots; semiconductor quantum wires; HBT circuits; HBT devices; HEMT circuits; HEMT devices; epitaxy; hetero-integration; high speed laser sources; indium phosphide; long wavelength lasers; nanostructured lasers; photodetectors; photonic crystals; photonic integration technology; quantum cascade devices; quantum dots; semiconductor heterostructures; semiconductor nanowires; substrate technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
ISSN :
1092-8669
Print_ISBN :
978-1-4244-3432-9
Type :
conf
DOI :
10.1109/ICIPRM.2009.5012405
Filename :
5012405
Link To Document :
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