Title :
Performance improvement of composition-graded AlGaAsSb/InP double heterojunction bipolar transistors
Author :
Wu, Bing-Ruey ; Dvorak, Martin W. ; Colbus, Patrick ; Low, T.S. ; Avanzo, Don D´
Author_Institution :
TSO Adv. Dev. - High Freq. Technol. Center (HFTC), Agilent Technol., Inc., Santa Rosa, CA
Abstract :
Compositional graded base AlxGa1-xAsSb/InP DHBT is demonstrated to show DC current gain of ~100 with 300 Aring base and base sheet resistance of 1000 Omega/square. The improvement is more than 50% compared to uniform base GaAsSb/InP DHBT with the same base thickness and sheet resistance.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor heterojunctions; AlGaAsSb-InP; DC current gain; DHBT; base sheet resistance; composition-graded double heterojunction bipolar transistor; layer structure design; Application specific integrated circuits; DH-HEMTs; Doping; Double heterojunction bipolar transistors; Frequency; High speed integrated circuits; Indium phosphide; Lattices; Molecular beam epitaxial growth; Photonic band gap;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012409
