DocumentCode
1715218
Title
Progress in photonic crystal quantum-dot and quantum-well lasers
Author
Kamp, M. ; Höfling, S. ; Forchel, A.
Author_Institution
Tech. Phys., Rontgen-Center for Complex Mater. Syst., Wurzburg
fYear
2009
Firstpage
69
Lastpage
72
Abstract
The combination of structures with low-dimensional electronic confinement (quantum dots/dashes/wells) and photonic crystals in semiconductor lasers allows the integration of additional optical functionality in a very compact manner. In addition to providing ultimate control over the electronic and photonic states in the device, there are also practical benefits from this combination. The compact footprint of photonic crystal based devices allows very simple integration schemes of active and passive sections on the same layer structure. Several devices types for applications in telecommunication and sensing based on these approach are discussed.
Keywords
photonic crystals; quantum dot lasers; quantum well lasers; semiconductor lasers; low-dimensional electronic confinement; optical functionality; photonic crystal quantum-dot laser; photonic crystal quantum-well laser; photonic states; semiconductor lasers; telecommunication; Integrated optics; Optical control; Optical sensors; Photonic crystals; Potential well; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Telecommunication control;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location
Newport Beach, CA
ISSN
1092-8669
Print_ISBN
978-1-4244-3432-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2009.5012423
Filename
5012423
Link To Document