Title :
Growth of InP crystals with rare-earth elements
Author :
Yatskiv, R. ; Grym, J. ; Zdansky, K. ; Pekarek, L. ; Zavadil, J.
Author_Institution :
Inst. of Photonics & Electron., Acad. of Sci. of the Czech Republic, Prague
Abstract :
We report on the influence of rare earth (RE) elements (Pr, Er, and Dy) addition during vertical Bridgman low pressure synthesis on the properties of InP crystals. The temperature dependent Hall measurement and low-temperature photoluminescence (PL) spectroscopy were employed to study the changes in electrical and optical properties of the crystals. The observed changes are attributed to the gettering effect of REs caused by the high affinity of REs towards shallow impurities in InP.
Keywords :
Hall effect; III-V semiconductors; crystal growth from melt; dysprosium; europium; getters; impurities; indium compounds; photoluminescence; praseodymium; InP:Dy; InP:Er; InP:Pr; electrical properties; gettering effect; low-temperature photoluminescence spectroscopy; optical properties; rare earth elements; shallow impurities; temperature dependent Hall measurement; vertical Bridgman low pressure synthesis; Crystals; Electric variables measurement; Erbium; Gettering; Impurities; Indium phosphide; Photoluminescence; Spectroscopy; Temperature dependence; Temperature measurement;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012450
