Ka-band pHEMT quadrupler with injection and extraction from oscillator frequency doubling points

Author

Wei-Ling Chang ; Chinchun Meng ; Jin-Siang Syu ; Yan-Feng Wu ; Guo-Wei Huang

Author_Institution

Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

3

Abstract

A Ka-band injection-locked quadrupler MMIC is demonstrated using 0.15-μm pseudomorphic high electron mobility transistor (pHEMT) technology. pHEMT technology is suitable to the millimeter wave quadrupler by using the topology of high-order sub-harmonic injection lock based on a cross-coupled oscillator. Furthermore, thanks to the semi-insulating GaAs substrate, it is easy to implement microwave/millimeter wave passive components to achieve accurate balanced signals. As a result, the measured output power of the quadrupler is 8 dBm for frequency of 30 GHz and the locking bandwidth reaches 300 MHz.

Keywords

HEMT circuits; III-V semiconductors; MMIC oscillators; frequency multipliers; gallium arsenide; injection locked oscillators; microwave circuits; Ka-band injection-locked quadrupler MMIC; Ka-band pHEMT quadrupler; bandwidth 300 MHz; frequency 30 GHz; microwave/millimeter wave passive components; oscillator frequency doubling points; pseudomorphic high electron mobility transistor; semi-insulating substrate; size 0.15 mum; Abstracts; Communication standards; Data communication; Digital multimedia broadcasting; Gallium arsenide; Topology; Voltage control; GaAs; Marchand balun; Sub-harmonic; high-electron mobility transistors (HEMTs); injection-locked; voltage controlled oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848643

Filename

6848643