Title :
Fabrication of InP/InGaAs channel MOSFET with MOVPE selectively regrown source
Author :
Kanazawa, Toru ; Saito, Hisashi ; Wakabayashi, Kazuya ; Tajima, Tomonori ; Miyamoto, Yasuyuki ; Furuya, Kazuhito
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo
Abstract :
An InP/InGaAs composite channel MOSFET with InGaAs source is fabricated, this InGaAs source is selectively regrown by metalorganic vapor phase epitaxy. The maximum drain current of MOSFET (at VD = VG = 3 V) is 360 mA/mm at room temperature with the Si-doped channel, 20-nm-thick SiO2 gate insulator and 2 mum channel length. However, the drain current of regrown MOSFET is smaller than MOSFET without regrowth because of high access resistance which was caused by low doping concentration in regrown layer.
Keywords :
III-V semiconductors; MOCVD; MOSFET; doping profiles; gallium arsenide; indium compounds; vapour phase epitaxial growth; InP-InGaAs; MOSFET; MOVPE; channel length; doping concentration; drain current; gate insulator; metalorganic vapor phase epitaxy; semiconductor composite channel; size 20 nm; voltage 3 V; Contacts; Electrodes; Epitaxial growth; Epitaxial layers; Fabrication; Gold; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; MOSFET circuits;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012504
