DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

Author

Moschetti, Giuseppe ; Nilsson, Per-Ake ; Wadefalk, N. ; Malmkvist, M. ; Lefebvre, Eric ; Grahn, Jan ; Roelens, Yannick ; Noudeviwa, A. ; Olivier, Augustin ; Bollaert, S. ; Danneville, Frangois ; Desplanque, Ludovic ; Wallart, Xavier ; Dambrine, Gilles

Author_Institution

Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg

fYear

2009

Firstpage

323

Lastpage

325

Abstract

The DC properties of 110-nm gate-length InAs/AlSb-based HEMTs at cryogenic (30 K) and room temperature (300 K) have been investigated. Compared to 300K, devices at 30 K exhibited lower on-resistance (R_ON) and output conductance (g_DS), a higher transconductance (g_m) and a more distinct knee in the I_DS(V_DS) characteristics. The improvement in the DC performance at cryogenic temperature should mainly be attributed to the lower source-drain resistance.

Keywords

III-V semiconductors; aluminium compounds; cryogenics; high electron mobility transistors; indium compounds; DC characteristics; HEMT; InAs-AlSb; cryogenic temperature; high transconductance; lower source-drain resistance; output conductance; size 110 nm; temperature 293 K to 298 K; temperature 30 K; Contact resistance; Cryogenics; Dry etching; Gold; HEMTs; MODFETs; Noise reduction; Temperature sensors; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012506

Filename

5012506