Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped Hole Injection Layer

Author

Yulun Xian ; Shanjin Huang ; Zhiyuan Zheng ; Bingfeng Fan ; Zimin Chen ; Zhisheng Wu ; Gang Wang ; Baijun Zhang ; Hao Jiang

Author_Institution

State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China

Volume

9

Issue

4

fYear

2013

fDate

Apr-13

Firstpage

255

Lastpage

259

Abstract

The performance of InGaN/GaN multiple quantum wells (MQWs) blue light-emitting diodes (LEDs) was improved by inserting a thin Mg-delta-doped hole injection layer at the end of the MQWs. The forward- and reverse-leakage currents were significantly reduced compared with those of the LEDs without the inserting layer. The light output power was enhanced by 13% at a 350 mA injection current. The improved performance could be ascribed to the dislocation suppression and hole concentration enhancement in the p-type GaN by inserting the Mg-delta-doped structure.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; magnesium; quantum well devices; semiconductor doping; wide band gap semiconductors; InGaN-GaN:Mg; Mg-delta-doped structure; blue light emitting diode; current 350 mA; dislocation suppression; forward-; hole concentration enhancement; hole injection layer; multiple quantum wells light emitting diode; nitride based light emitting diode; p-type GaN; reverse-leakage currents; Gallium nitride; Light emitting diodes; Power generation; Quantum well devices; Solid state lighting; GaN LED; Mg-delta-doped; p-GaN;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2012.2226205

Filename

6415300