مرکز منطقه ای اطلاع رساني علوم و فناوري - Deep submicron AlGaN/GaN heterostructure field effect transistors for nficrowave and high temperature applications

DocumentCode :

1722536

Title :

Deep submicron AlGaN/GaN heterostructure field effect transistors for nficrowave and high temperature applications

Author :

Khan, M.A. ; Kuznia, J.N. ; Olson, DT ; Schaff, W.J. ; Burm, J.W. ; Shur

Author_Institution :

APA Optics

fYear :

1994

fDate :

6/16/1905 12:00:00 AM

Firstpage :

149

Lastpage :

150

Keywords :

Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; MODFETs; Millimeter wave transistors; Temperature;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Device Research Conference, 1994. 52nd Annual

Type :

conf

DOI :

10.1109/DRC.1994.1009451

Filename :

1009451

Link To Document :