DocumentCode
1723741
Title
Dynamics of oxide confinement vertical cavity semiconductor lasers
Author
Lysak, V. ; Sukhoivanov, I. ; Ivanov, P. ; Marciniak, M.
Author_Institution
Nat. Univ. of Radio Electron., Kharkov, Ukraine
Volume
1
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
136
Abstract
In this work we investigate pulse behaviour of oxide confinement vertical cavity surface emitting laser for main and side modes. It´s shown that the pulse delay time increases with increasing of structure radius. It allows to uniformity of pulse form for the main and side modes.
Keywords
diffusion; laser modes; laser theory; semiconductor device models; semiconductor lasers; surface emitting lasers; VCSELs; main modes; oxide confinement vertical cavity surface emitting laser; pulse behaviour; pulse delay time; pulse form; side modes; structure radius; Carrier confinement; Electron optics; Equations; Laser modes; Optical resonators; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Transparent Optical Networks, 2002. Proceedings of the 2002 4th International Conference on
Print_ISBN
0-7803-7375-8
Type
conf
DOI
10.1109/ICTON.2002.1009529
Filename
1009529
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