• DocumentCode
    1724945
  • Title

    Study of the dependence of Ga0.47In0.53As/AlxIn1-xAs power HEMT breakdown voltage on schottky layer design and device layout

  • Author

    Brown, J.J. ; Brown, A.S. ; Rosenbaum, S.E. ; Schmitz, A.S. ; Matloubian, M. ; Larson, L.E. ; Melendes, M.A. ; Thompson, M.A.

  • Author_Institution
    Hughes Research Laboratories
  • fYear
    1993
  • fDate
    6/15/1905 12:00:00 AM
  • Firstpage
    55
  • Lastpage
    56
  • Keywords
    Artificial intelligence; Cutoff frequency; Density measurement; Electric breakdown; Gain measurement; HEMTs; Indium phosphide; Power generation; Power measurement; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009579
  • Filename
    1009579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1724945