Title :
High-fmax AlGaAs/InGaAs and AlGaAs/GaAs HBTs fabricated with MOMBE selective growth in extrinsic base regions
Author :
Shimawaki, Hidenon ; Amamiya, Yasushi ; Furuhata, Naoki ; Honjo, Kazuhiko
Author_Institution :
Microelectronics Research Laboratories, NEC Corporation
fDate :
6/15/1905 12:00:00 AM
Keywords :
Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Microwave devices; Niobium;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009595
