• DocumentCode
    1725317
  • Title

    High-fmax AlGaAs/InGaAs and AlGaAs/GaAs HBTs fabricated with MOMBE selective growth in extrinsic base regions

  • Author

    Shimawaki, Hidenon ; Amamiya, Yasushi ; Furuhata, Naoki ; Honjo, Kazuhiko

  • Author_Institution
    Microelectronics Research Laboratories, NEC Corporation
  • fYear
    1993
  • fDate
    6/15/1905 12:00:00 AM
  • Firstpage
    91
  • Lastpage
    92
  • Keywords
    Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Microwave devices; Niobium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009595
  • Filename
    1009595
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1725317