DocumentCode :
1725397
Title :
Neural network modeling of fabrication yield using manufacturing data
Author :
Mevawalla, Z.N. ; May, G.S. ; Honjo, M. ; Kiehlbauch, M.W.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2011
Firstpage :
1
Lastpage :
6
Abstract :
This paper describes the creation of artificial neural network models using production line data and illustrates their usefulness for process control in semiconductor manufacturing. Three artificial neural network models are created. The first models a high aspect ratio etch process. The other two are created to predict yield metrics from inline critical dimension (CD) measurements. One model predicts the number of faults on a die, and the other predicts the probability of die failure at probe. The high aspect ratio etch model has an average prediction error of 3.9%. The average prediction error for the number of faults on a die is 14.9%, and the average prediction error for probability of die failure at probe is 21.8%. A sensitivity analysis is performed on each model to illustrate how they can be used to judge the relative impact of each input.
Keywords :
dies (machine tools); etching; failure analysis; integrated circuit yield; neural nets; probability; probes; process control; sensitivity analysis; units (measurement); artificial neural network models; average prediction error; critical dimension measurements; die failure; fabrication yield; high aspect ratio etch process; probability; probe; process control; production line data; semiconductor manufacturing; sensitivity analysis; Artificial neural networks; Data models; Neurons; Object oriented modeling; Predictive models; Semiconductor device measurement; Semiconductor device modeling; Neural networks; advanced process control; production line; semiconductor manufacturing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI
Conference_Location :
Saratoga Springs, NY
ISSN :
1078-8743
Print_ISBN :
978-1-61284-408-4
Electronic_ISBN :
1078-8743
Type :
conf
DOI :
10.1109/ASMC.2011.5898198
Filename :
5898198
Link To Document :
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