DocumentCode :
1725401
Title :
A 0.5-μm EEPROM cell using poly-si TFT technology
Author :
Sato, A. ; Momiyama, Y. ; Nara, Y. ; Sugii, T. ; Arimoto, Y. ; Ito, T.
Author_Institution :
Fujitsu Laboratory LTD.
fYear :
1993
fDate :
6/15/1905 12:00:00 AM
Firstpage :
99
Lastpage :
100
Keywords :
EPROM; Insulation; Ion implantation; MOSFETs; Nonvolatile memory; Oxidation; Semiconductor films; Thin film transistors; Threshold voltage; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1993. 51st Annual
Type :
conf
DOI :
10.1109/DRC.1993.1009598
Filename :
1009598
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1725401
