• DocumentCode
    1725682
  • Title

    Electrical characteristics of NO nitrided SiO2 grown on p-type 4H-SiC

  • Author

    Li, H.F. ; Dimitrijev, S. ; Harrison, H.R. ; Sweatman, D. ; Tanner, P.

  • Author_Institution
    Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
  • Volume
    2
  • fYear
    1997
  • Firstpage
    611
  • Abstract
    This paper presents the results of NO nitridation of SiO2 grown on p-type 4H-SiC. NO nitridation has a beneficial effect on the quality of the oxides grown on p-type 4H-SiC. The C-V curves become smoother and sharper after NO annealing. Frequently observed interface ledge is also removed from NO annealed samples
  • Keywords
    annealing; nitridation; oxidation; semiconductor-insulator boundaries; silicon compounds; C-V curve; NO; NO nitridation; SiO2 oxide growth; SiO2-SiC; annealing; electrical characteristics; interface ledge; p-type 4H-SiC substrate; Annealing; Capacitance-voltage characteristics; Doping; Electric variables; Frequency; Intersymbol interference; Oxidation; Petroleum; Silicon carbide; Tail;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1997. Proceedings., 1997 21st International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-3664-X
  • Type

    conf

  • DOI
    10.1109/ICMEL.1997.632915
  • Filename
    632915
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1725682