Reliability of InGaAs/InP photodiodes passivated with polyimide

Author

Pereira, J.S. ; Shieh, P.J. ; Gobbi, A.L. ; Sato, E. ; Malberti, P. ; Santos, T. ; Borin, F. ; Patel, N.

Author_Institution

TELEBRAS Res. & Dev. Center, Campinas, Sao Paulo, Brazil

fYear

1993

Firstpage

372

Lastpage

374

Abstract

The results of reliability studies of InGaAs/InP PIN covered-mesa photodiode passivated with polyimide are presented. The photodiode consists of two epitaxial layers of n/sup -/ InP and n/sup -/InGaAs grown by liquid phase epitaxy on n/sup +/ InP substrate. The anode of the photodiode was obtained by Zn diffusion and the passivation of the junction with polyimide. All the devices were bonded with AuSn on ceramic chip carriers. Accelerated life-tests were carried out at 100 degrees C, 130 degrees C and 150 degrees C at -5 V. From the random failure rates, the activation energy of the degradation process in the dark current was estimated to be 0.77 eV and the room temperature average life time was estimated to be 1*10/sup 8/ h. Stable operation of the dark current during more than 10000 h at 150 degrees C, -5 V was observed.<>

Keywords

III-V semiconductors; failure analysis; gallium arsenide; indium compounds; life testing; p-i-n photodiodes; passivation; polymer films; reliability; semiconductor device testing; -5 V; 0.77 eV; 1*10/sup 8/ hr; 100 to 150 degC; 10000 hr; AuSn; InGaAs-InP; InP; PIN covered-mesa photodiode; Zn diffusion; accelerated life tests; activation energy; average life time; ceramic chip carriers; dark current; degradation process; epitaxial layers; liquid phase epitaxy; n/sup +/ InP substrate; n/sup -/ InP; n/sup -/InGaAs; polyimide passivation; random failure; reliability studies; Anodes; Dark current; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Life estimation; Photodiodes; Polyimides; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1993. 31st Annual Proceedings., International

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-0782-8

Type

conf

DOI

10.1109/RELPHY.1993.283273

Filename

283273