Gate induced resistive switching in 1T1R structure with improved uniformity and better data retention

Author

Hongtao Liu ; Hangbing Lv ; Xiaoxin Xu ; Ruoyu Liu ; Ling Li ; Qi Liu ; Shibing Long ; Yu Wang ; Zongliang Huo ; Ming Liu

Author_Institution

Laborarory of Nano-Fabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China

fYear

2014

fDate

18-21 May 2014

Firstpage

1

Lastpage

2

Abstract

Uniformity issue and data retention are two severe challenges for resistive random access memory (RRAM). The wide dispersion of high resistance state (HRS) is the main cause of uniformity issue. In this work, a novel programming scheme named gate induced resistive switching is proposed to improve the reliability of RRAM in one transistor and one resistor (1T1R) structure. Owing to the effective elimination of the intermediate resistance states, the uniformity of HRS is greatly improved. Moreover, the new program scheme tends to form single conductive filament (CF) during the SET process. Compared with multi-CFs, the reduced surface area of single-CF for copper ions diffusing from CF leads to better data retention of low resistance state (LRS).

Keywords

CMOS memory circuits; integrated circuit reliability; random-access storage; 1T1R structure; RRAM reliability; SET process; data retention; gate induced resistive switching; low resistance state; resistive random access memory; single conductive filament; Electrodes; Hafnium compounds; Logic gates; Power generation; Programming; Resistance; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2014 IEEE 6th International

Conference_Location

Taipei

Print_ISBN

978-1-4799-3594-9

Type

conf

DOI

10.1109/IMW.2014.6849361

Filename

6849361