SJ-FINFET: A New Low Voltage Lateral Superjunction MOSFET

This paper proposes a new SOI lateral superjunction (SJ) power transistor structure, SJ-FINFET, to address the requirement for low voltage lateral MOSFETs with low specific on-resistance (R_on,sp). The SJ-FINFET consists of a 3D trench gate and a SJ drift region (the fin) to reduce both the channel resistance and the drift region resistance. The SJ-FINFET with n/p-drift region pillar thickness (SOI layer thickness, T_epi) of 4 mum was simulated and found to have a R_on,sp of 0.18 mOmegaldrcm². This is 21% lower than the well-known silicon limit at a breakdown voltage (BV_dss) of 68 V.