Title :
III-V/Ge CMOS technologies on Si platform
Author :
Takagi, S. ; Takenaka, M.
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
Abstract :
III-V/Ge CMOS on Si platform, realized by heterogeneous integration, is expected to provide a variety of applications from high speed logic CMOS to versatile SoC chips, where various functional devices can be co-integrated. Among them, we are currently pursuing high speed/low power logic CMOS using III-V/Ge channels. While many critical issues have been well recognized for them, we present possible solutions to break through these difficulties in this presentation.
Keywords :
CMOS logic circuits; III-V semiconductors; silicon; system-on-chip; III-V/Ge CMOS technologies; III-V/Ge channels; Si platform; heterogeneous integration; high speed logic CMOS; low power logic CMOS; versatile SoC chips; CMOS integrated circuits; CMOS technology; Indium gallium arsenide; Logic gates; MOSFETs; Silicon; Substrates;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556205
