Title :
III–V MOSFETs with a new self-aligned contact
Author :
Zhang, Xingui ; Guo, Huaxin ; Ko, Chih-Hsin ; Wann, Clement H. ; Cheng, Chao-Ching ; Lin, Hau-Yu ; Chin, Hock-Chun ; Gong, Xiao ; Lim, Phyllis Shi Ya ; Luo, Guang-Li ; Chang, Chun-Yen ; Chien, Chao-Hsin ; Han, Zong-You ; Huang, Shih-Chiang ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
Abstract :
We report the first demonstration of III-V n-MOSFETs with self-aligned contact technology. The self-aligned contact was formed using a salicide-like process which is compatible with CMOS process flow. A new epitaxy process was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. Nickel was deposited and annealed to form NiGeSi, and unreacted metal was removed. A second anneal diffuses Ge and Si into GaAs to form heavily n+ doped regions, and a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. MOSFETs with the new self-aligned metallization process were realized.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; annealing; epitaxial growth; gallium arsenide; germanium compounds; metallisation; ohmic contacts; CMOS process flow; GaAs; III-V MOSFET; III-V n-MOSFET; NiGeSi; annealing; epitaxy process; gallium arsenide; ohmic contact; salicide-like process; self-aligned contact technology; self-aligned metallization process; self-aligned nickel germanosilicide; source and drain regions; thin continuous germanium-silicon layer; Annealing; Epitaxial growth; Gallium arsenide; Logic gates; MOSFETs; Nickel; Silicon;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556240
