Title :
Effect of Be segregation on NiSi/Si Schottky barrier heights
Author :
Gudmundsson, Valur ; Hellström, Per-Erik ; Östling, Mikael
Author_Institution :
ICT, R. Inst. of Technol., Kista, Sweden
Abstract :
The effect of Be segregation on the Schottky barrier heights (SBH) of NiSi/Si is studied. Many elements have been shown to modulate the SBH of NiSi. However, group II elements have, to our knowledge, not been investigated before. Be is a double acceptor in Si, making it interesting for SBH modulation towards the valence band. The results show that Be implantation did not change the silicidation process. The SBH modulation was found to be strongly dependent on the silicidation temperature, with a minimum barrier to the valence band Φbp=0.28±0.02 eV, for diodes formed at 600 °C. SIMS analysis show the Be dose left at the interface is very low. With such a low dose, modulation cannot be caused by an interface dipole. However, the results can be explained assuming a thin (~4-5 nm) layer of activated Be close to the interface.
Keywords :
Schottky barriers; Schottky diodes; beryllium; elemental semiconductors; nickel compounds; secondary ion mass spectra; silicon; Be; NiSi-Si; SBH modulation; SIMS analysis; Schottky barrier heights; diodes; double acceptor; interface dipole; secondary ion mass spectroscopy; silicidation process; temperature 600 degC; valence band; Electrical resistance measurement; Modulation; Resistance; Schottky barriers; Silicidation; Silicon; Temperature measurement;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044193
