High-voltage microsecond pulse generator for plasma immersion ion implantation

Summary form only given, as follows. The generator is intended to supply plasma immerse ion implanters. It has the following parameters: voltage pulse amplitude - (20-60) kV, current pulse amplitude - (100-40) A, pulse length (5-20) /spl mu/s, leading edge length - 1 /spl mu/s, decay length 2 /spl mu/s, pulse frequency - up to 1000 Hz, average power - up to 10 kW. The generator is made by the scheme of a modulator with a partial capacity discharge. A high-power modulator tube GMI-29?1 (40 kV, 200 A) is used as a switch. A driver is made from a JGBT transistor. A pulse from the modulator is applied by the cable to the step-up pulsed transformer placed near the implanter. The transformer has a winding switch allowing control of the output voltage from 20 to 60 kV at a distance by 6 steps. Smooth control is realized by the power supply. The modulator has the current protection of the power supply and rapid (0.5 us) current protection of the modulator tube. The modulator can be controlled both from the local control board and at a distance - from the computer. The modulator has a load equivalent on the basis of a water resistor.