• DocumentCode
    17318
  • Title

    Low-Pattern-Dependence Prechirp Optical Modulation by Using Saturation Behaviors of SOA-Integrated EAM

  • Author

    Jui-Pin Wu ; Wei-Zun Ding ; Yi-Jen Chiu

  • Author_Institution
    Dept. of Photonics, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • Volume
    31
  • Issue
    23
  • fYear
    2013
  • fDate
    Dec.1, 2013
  • Firstpage
    3651
  • Lastpage
    3657
  • Abstract
    Low-pattern-dependence and chirp-control optical modulation using a monolithic integration of devices is proposed and demonstrated in this study. The monolithic integration consisting of semiconductor optical amplifier (SOA) and electroabsorption modulator (EAM) is used. As high enough optical power is coupled into a device to reach saturation condition, the field driving operation in an EAM (reversed-bias diode) and the current injection operation in an SOA (forward-bias diode) will have mutually complementary optical properties because of the reversed carrier dynamics, enabling optical waveform and its phase control. A 100 μm long EAM integrated with a 700 μm long SOA is fabricated for the device under test. A 10 Gb/s non-return-to-zero pattern trains are used for examining time-evolution optical waveform. A distorted waveform by gain saturation of SOA can be corrected by reversely predistorted signal modulated by EAM, sending out a nondistorted optical waveform. An improved signal-to-noise ratio (SNR) of data pattern from 8.8 to 10.8 is obtained by adjusting bias points of EAM and SOA, confirming pattern waveform enhancement. Total negative chirp of 6.2 GHz is also obtained from EAM and SOA, where -2.6 GHz frequency shift from SOA is extracted. Setting EAM and SOA in a negative chirp regime, a successful 43 km (photoreceiver limit) error free data transmission is found, suggesting that such an integration chip can enable simultaneously amplitude, pattern and prechirp optical processing, and showing high potential in the application of metro-area optical network.
  • Keywords
    chirp modulation; electroabsorption; integrated optics; optical couplers; optical distortion; optical fabrication; optical modulation; optical receivers; optical saturation; semiconductor optical amplifiers; SOA-integrated EAM; bit rate 10 Gbit/s; current injection; distance 43 km; distorted waveform; electroabsorption modulator; error-free data transmission; forward-bias diode; frequency 6.2 GHz; gain saturation; low-pattern-dependence prechirp optical modulation; monolithic integration; optical coupler; optical fabrication; optical properties; phase control; photoreceiver limit; prechirp optical processing; reversed carrier dynamics; reversed-bias diode; semiconductor optical amplifier; signal distortion; signal-to-noise ratio; size 100 mum; size 700 mum; time-evolution optical waveform; Chirp; Optical fibers; Optical modulation; Optical pumping; Optical saturation; Semiconductor optical amplifiers; Electroabsorption modulators (EAM); integrated optics devices; multiple quantum well (MQW); pattern effect; prechirp control; self-phase modulation; semiconductor optical amplifiers;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.2013.2282951
  • Filename
    6605504