• DocumentCode
    1732008
  • Title

    Cryogenic MOSFET power conversion

  • Author

    Mueller, Otward

  • Author_Institution
    General Electric Corp. Res. & Dev., Schenectady, NY, USA
  • fYear
    1989
  • Firstpage
    94
  • Lastpage
    98
  • Abstract
    Possible applications of low-temperature electronics in the field of cryogenic power conversion are examined. Full-bridge amplifiers were built and tested at liquid-nitrogen temperature. Transistor conduction and switching losses are analyzed and compared for 300 K and 77 K. The effect of low-temperature operation on overall power conversion efficiency is explored. It is concluded that commercially available MOSFETs in plastic or metal packages work very well if immersed in a bath of liquid nitrogen despite the fact that they were not designed for such a cold application. They can be operated at much higher current levels, and high-efficiency switchmode circuits can be designed. Heatsinks other than the liquid nitrogen are not required. This permits the design of extremely small, lightweight, and low-cost power conversion circuits
  • Keywords
    insulated gate field effect transistors; low-temperature techniques; power conversion; power transistors; semiconductor device testing; 300 K; 77 K; MOSFETs; conversion efficiency; cryogenic power conversion; full-bridge amplifiers; high current level operation; high-efficiency switchmode circuits; low-temperature electronics; switching losses; transistor conduction; Cryogenics; MOSFET circuits; Nitrogen; Plastic packaging; Power MOSFET; Power conversion; Switching circuits; Switching loss; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on
  • Conference_Location
    Burlington, VT
  • Type

    conf

  • DOI
    10.1109/LTSE.1989.50189
  • Filename
    50189