The Vth controllability of 5nm body-tied CMOS FinFET

Author

Cho, Hye Jin ; Choe, Jeong Dong ; Han, Jeongnam ; Kim, Dongchan ; Park, Heungsik ; Goo, Doohoon ; Li, Ming ; Oh, Chang Woo ; Kim, Dong-Won ; Kim, Tae Yong ; Lee, Choong-Ho ; Park, Donggun ; Kim, Kinam ; Ryu, Byung-Il

Author_Institution

Semicond. R&D Div., Samsung Electron. Co., Gyeonggi-Do, South Korea

fYear

2005

Firstpage

116

Lastpage

117

Abstract

In this paper, we demonstrate a 5nm width body-tied CMOS finFET on bulk Si for the first time. Also the threshold voltage control of the 5nm finFET is shown by using channel and pocket doping profile optimization along the narrow active fin. The excellent performance of finFET such as an excellent subthreshold swing (SS), and drain induced barrier lowering (DIBL) characteristics were found. And the systemic analyses of electrical characteristics dependencies on the fin width were evaluated for various fin width (5 ∼ 100nm).

Keywords

CMOS integrated circuits; MOSFET; doping profiles; voltage control; 5 nm; Vth controllability; body-tied CMOS FinFET; doping profile optimization; drain induced barrier lowering; electrical characteristics; fin width; narrow active fin; subthreshold swing; threshold voltage control; CMOS process; CMOS technology; Controllability; Doping; FinFETs; Immune system; MOS devices; Manufacturing processes; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on

ISSN

1930-8868

Print_ISBN

0-7803-9058-X

Type

conf

DOI

10.1109/VTSA.2005.1497103

Filename

1497103