DocumentCode
1734480
Title
Very Low Noise in 90nm Node RF MOSFETs using a New Layout
Author
Kao, H.L. ; Chin, Albert ; Liao, C.C. ; McAlister, S.P.
Author_Institution
Dept. of Electron. Eng., Chang Cung Univ., Tao-Yuan
fYear
2007
Firstpage
44
Lastpage
47
Abstract
The authors have directly measured a record low minimum noise figure (NFmin) of 0.46 dB at 10 GHz, along with a high 16.6 dB associated gain, in an 8-finger 90 nm node MOSFET (LG = 65nm) without de-embedding. At 18 GHz, NFmin was 0.83 dB with 13.5 dB gain. This was achieved using a microstrip line layout to screen the RF noise generated by the lossy substrate
Keywords
MOSFET; microwave field effect transistors; 0.46 dB; 0.83 dB; 10 GHz; 13.5 dB; 16.6 dB; 18 GHz; 90 nm; RF noise screening; low noise RF MOSFET; microstrip line layout; Conductivity; Coplanar transmission lines; Coplanar waveguides; Gain; MOSFETs; Microstrip; Noise figure; Noise measurement; Radio frequency; Scattering parameters; Associated Gain; MOSFET; RF Noise; fT;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location
Long Beach, CA
Print_ISBN
0-7803-9764-9
Electronic_ISBN
0-7803-9765-7
Type
conf
DOI
10.1109/SMIC.2007.322765
Filename
4117321
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