DocumentCode :
1734527
Title :
Cryogenic Small Signal Operation of 0.18 μm MOSFETs
Author :
Venkataraman, Sunitha ; Banerjee, Bhaskar ; Lee, Chang-Ho ; Laskar, Joy ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear :
2007
Firstpage :
52
Lastpage :
55
Abstract :
In this work we present the cryogenic small signal ac performance of MOSFETs from a commercially available 0.18 μm technology node. The peak cut-off frequency (fT) increases from 63GHz to 90GHz at 77K and the fmax increases from 50GHz to 78GHz at 77K. A simple small signal sub-circuit model is used to understand the dependence of device parameters with temperature. The understanding of cryogenic small signal performance is crucial for the development of RF CMOS integrated circuits for low temperature applications.
Keywords :
CMOS integrated circuits; MOSFET; cryogenic electronics; integrated circuit modelling; radiofrequency integrated circuits; 0.18 micron; 50 GHz; 63 GHz; 77 K; 78 GHz; 90 GHz; MOSFET; RF CMOS integrated circuits; cryogenic small signal operation; simple small signal sub-circuit model; CMOS technology; Cryogenics; Extraterrestrial measurements; Fingers; MOSFETs; Microwave devices; RF signals; Radio frequency; Signal design; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
Type :
conf
DOI :
10.1109/SMIC.2007.322767
Filename :
4117323
Link To Document :
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