• DocumentCode
    1734580
  • Title

    Comparison of radiation hardening techniques for standard CMOS technologies

  • Author

    Salem, M.S. ; Salem, M.S. ; Kayed, S.I. ; Ragai, H.F.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Ain Shams Univ., Cairo, Egypt
  • fYear
    2003
  • Lastpage
    42377
  • Abstract
    This paper is mainly concerned with the comparison of two well-known hardness techniques on the circuit level rather than on the technology level (low-cost standard CMOS technology is assumed). The inverter has been taken as a case study. The implementation technology is CMOS 0.6μ from AMS.
  • Keywords
    CMOS integrated circuits; MOSFET; invertors; radiation hardening (electronics); Austria Mikro System; CMOS technology; complementary metal-oxide-semiconductor; field oxide transistor; inverter; radiation hardening techniques; CMOS technology; Circuits; Electron mobility; Electron traps; Inverters; Ionizing radiation; MOSFETs; Radiation hardening; Threshold voltage; X-rays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Science Conference, 2003. NRSC 2003. Proceedings of the Twentieth National
  • Print_ISBN
    977-5031-75-3
  • Type

    conf

  • DOI
    10.1109/NRSC.2003.1217374
  • Filename
    1217374
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1734580